| \? EGP50A, EG.P50B, EGP50c, EG.P50D, EG.P50F, EGP50G.7 www'ViShay'C°m Vishay General Semiconductor ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted) PARAMETER Maximum instantaneousforward voltage Maximum DC reverse current at rated DC blocking voltage TA : 125 ccMaximum reverse IF : 0.5 A, IR : 1.0 A, recovew time I" : 0.25 A Typical junction capacitance 4.0 V, 1 MHZ THERMAL cHARAcTERIsTIcs (TA = 25 0C unless PARAMETER Typical thermal resistance NoteN ate2 T J : TJ Max. (i) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted PREFERRED P/N EGP50GaEs/54 jtjj mm mmEGP50GHEa/sriii j?jjEGP5oGHEa/rsiii jtjrj ii) AEC-Q101 qumniedRATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 (‘C unless otherwise noted) 175 H Resistive or Inductive Load A 83 ms Smgje Ha” S,ne.WaVe E 3 150 e ‘ E 3 (3 \ I‘ g 1255 CopperHeatsinks k § 100 ‘ 0: 3I w I IIE E 75 E ‘ TL uO_ 50 ‘I m + t II g U.E75“jS5mmj E 25 Q Lead Length <0 0 25 50 75 10B 125 150 175 1 10 100 Lead Temperature (“(3) Number 0' Cycles at 60 HZ Fig. 1 — Maximum Forward Current Derating Curve Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Revision: 15-Aug-13 2 Document Number: 88585 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.Com, DiodesEurope@vishay.Com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.comzdoo?91000 |